Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor-Reference-Cited by-同舟云学术

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Published:2018-03-05 Issue:3 Volume:11 Page:386
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

An Jong-Ki,Chung Nak-Kwan,Kim Jin-Tae,Hahm Sung-Ho,Lee Geunsu,Lee Sung,Lee Taehoon,Park In-Sung,Yun Ju-Young

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/11/3/386/pdf

Reference23 articles.

1. Growth, dielectric properties, and memory device applications of ZrO2 thin films

2. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes;Pešić;J. Appl. Phys.,2016

3. ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3/C7H8 precursor and ozone

4. Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers

5. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

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