Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes-Reference-Cited by-同舟云学术

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Published:2016-02-14 Issue:6 Volume:119 Page:064101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pešić Milan,Knebel Steve,Geyer Maximilian,Schmelzer Sebastian,Böttger Ulrich,Kolomiiets Nadiia^ORCID,Afanas'ev Valeri V.,Cho Kyuho,Jung Changhwa,Chang Jaewan,Lim Hanjin,Mikolajick Thomas^ORCID,Schroeder Uwe

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941537

Reference23 articles.

1. Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM

2. Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

3. SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers

4. Conduction barrier offset engineering for DRAM capacitor scaling

5. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Dielectric Constant and Leakage Current of ZrO₂-Based Metal–Insulator–Metal Capacitors by Si Doping;IEEE Transactions on Electron Devices;2024-08

2. Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction;Journal of Applied Physics;2024-07-01

3. Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions;Journal of Applied Physics;2023-12-01

4. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications;Science China Information Sciences;2023-09-21

5. Atomic layer deposition of thin films: from a chemistry perspective;International Journal of Extreme Manufacturing;2023-06-14