Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions-Reference-Cited by-同舟云学术

Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions

Published:2023-12-01 Issue:21 Volume:134 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Barbot J.¹^ORCID,Fontanini R.²^ORCID,Segatto M.²^ORCID,Coignus J.¹^ORCID,Triozon F.¹^ORCID,Carabasse C.¹,Bedjaoui M.¹,Andrieu F.¹^ORCID,Esseni D.²^ORCID,Grenouillet L.¹^ORCID

Affiliation:

1. Univ. Grenoble Alpes, CEA, Leti 1 , F-38000 Grenoble, France

2. DPIA, Università degli Studi di Udine 2 , Udine, Italy

Abstract

This paper presents polarization loss and imprint in bilayer ferroelectric tunnel junctions as a function of relaxation time (<1 s) and after different SET/RESET pulses. Measurements were performed on Hf0.5Zr0.5O2/Al2O3 stack at room temperature and systematically compared to reference samples without Al2O3. The experimental results were interpreted using self-consistent simulations coupling the polarization dynamic with charge trapping at the FE/DE interface. From this, mechanisms playing on short-term retention and imprint were explained dynamically. Amount of trapped charge modulated by amplitude and duration of SET/RESET pulses was presented as a root cause.

Funder

Horizon 2020 Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0176374/18234945/214102_1_5.0176374.pdf

Reference33 articles.

1. Memory devices and applications for in-memory computing

2. Emerging memory devices for artificial synapses

3. Emerging neuromorphic devices

4. Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays