Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers
Author:
Affiliation:
1. Institute of Solid State Electronics, Technische Universität Wien, 1040 Vienna, Austria
2. University Service Centre for Transmission Electron Microscopy USTEM, Technische Universität Wien, 1060 Vienna, Austria
Funder
Austrian Science Fund (FWF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4944803
Reference23 articles.
1. Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations
2. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application
3. Dielectric Constant ofCr2O3Crystals
4. Effect of CrO3 addition in ZrO2: Electric and dielectric behavior
5. Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
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