The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO<sub>2</sub>/TiN Capacitors-Reference-Cited by-同舟云学术

The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO₂/TiN Capacitors

Published:2023-01 Issue:1 Volume:70 Page:59-64
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Yuanbiao¹^ORCID,Tang Xinyi¹,Xu Guangwei¹^ORCID,Li Haoxin¹^ORCID,He Song¹,Hu Xianqin²,Su Xingsong²,Bai Weiping²,Lu Di¹,Long Shibing¹^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China (USTC), Hefei, China

2. Changxin Memory Technologies, Inc., Hefei, China

Funder

NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10004030/09965582.pdf?arnumber=9965582

Reference36 articles.

1. High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric

2. Improved thermal stability and device performance of ultra-thin (EOT< 10Å) gate dielectric MOSFETs by using hafnium oxynitride (HfOxNy);kang;Symp VLSI Technol Dig Tech Papers,2002

3. Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

4. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

5. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids;zhou;IEDM Tech Dig,2016

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in dielectric properties of ZrO2 thin film by employing a Zr precursor with enhanced thermal stability in high-temperature atomic layer deposition;Materials Today Communications;2024-08

2. CMOS-Compatible Low-T Processing Methods for HZO-based DRAM capacitors by E-field Cycling;2024 IEEE International Memory Workshop (IMW);2024-05-12

3. A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics;Nanomaterials;2023-12-16

4. Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts;Applied Physics Letters;2023-09-04

5. Leakage Current Minimization of TiO₂-Based Metal–Insulator–Metal Capacitors Using High-Work-Function In₂O₃ and V₂O₅ Ultrathin Interlayers;IEEE Transactions on Electron Devices;2023-08