Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices

Abstract

β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide range of compelling applications in power electronics. In this review, we have explored the available radiations in the atmosphere and the effects of radiation on the β-Ga2O3 material and devices. The focus in this review summarizes various studies covering different radiation such as swift heavy ions, protons, neutrons, electrons, Gamma, and X-rays to understand the radiation-induced effects on the structure and their reliable performance in harsh environments. In addition, we focused on the various pre-existing defects in β-Ga2O3 and the emergence of radiation-induced defects that provoke a severe concern, especially from the device performance point of view. This review presents the irradiation-induced effects on the devices such as high-power devices such as Schottky barrier diodes (SBDs), field-effect transistors (FETs), metal-oxide-semiconductor (MOS) devices, and photodetectors. Some key studies including the changes in carrier concentration with a removal rate, Schottky barrier height (SBH), ideality factor, defect dynamics dielectric damage, interface charge trapping, a thermally activated recovery mechanism for charge carriers at elevated temperature, and diffusion length of minority charge carriers. These reports show that β-Ga2O3-based devices could be deployable for space or high-radiation terrestrial applications. These results provide/suggest a better device design based on the radiation degradation studies in the state-of-the-art β-Ga2O3 devices.