Radiation hardness evaluation of ε-Ga2O3 thin-film devices under swift heavy ion irradiation-Reference-Cited by-同舟云学术

Radiation hardness evaluation of ε-Ga2O3 thin-film devices under swift heavy ion irradiation

Published:2024-01 Issue: Volume:642 Page:158583
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yang Yongtao,Tang Yuanjun^ORCID,Liu Fanyu,Wang Lei,Zhang Fan^ORCID,Wang Tiejun^ORCID,Shu Lei^ORCID,Wu Zhenping^ORCID,Zhu Huiping^ORCID,Li Bo,Li Danfeng

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Texas Sea Grant, Texas A and M University

State Key Laboratory of Information Photonics and Optical Communications

City University of Hong Kong

National Key Research and Development Program of China

Aromatic Plant Research Center

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Beijing University of Posts and Telecommunications

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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4. Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates;Zhu;Nat. Electron.,2020

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