Funder
National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Reference50 articles.
1. Schaller, R. R. Moore’s law: past, present and future. IEEE Spectr. 34, 52–59 (1997).
2. Claeys, C. & Simoen, E. Radiation Effects in Advanced Semiconductor Materials and Devices (Springer, 2013).
3. Peck, D. S. & Schmid, E. R. Effects of radiation on transistors in the first telstar satellite. Nature 199, 741–744 (1963).
4. Fleetwood, D. M. Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling. IEEE Trans. Nucl. Sci. 65, 1465–1481 (2018).
5. Barnaby, H. J. Total-ionizing-dose effects in modern CMOS technologies. IEEE Trans. Nucl. Sci. 53, 3103–3121 (2006).
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