Flexible Solid-Electrolyte-Gated-Dielectric Carbon Nanotube Thin Film Transistors and Integrated Circuits with the Recorded Radiation Tolerance and Reparability-Reference-Cited by-同舟云学术

Flexible Solid-Electrolyte-Gated-Dielectric Carbon Nanotube Thin Film Transistors and Integrated Circuits with the Recorded Radiation Tolerance and Reparability

Published:2024-06-13 Issue:25 Volume:24 Page:7688-7697
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhang Nianjie¹²³,Li Jiaqi²³,Sui Nianzi²³,Kang Kaixiang²³,Deng Meng²³,Shao Shuangshuang²³,Gu Weibing²³,Liang Lijuan¹,Li Min²³,Zhao Jianwen²³^ORCID

Affiliation:

1. School of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102627, China

2. Key Laboratory of Semiconductor Display Materials and Chips, Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou 215123, China

3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

Funder

National Key Research and Development Program of China

Natural Science Foundation of China

he Cooperation Project of Vacuum Interconnect Research Facility (NANO-X) of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

Key Research and Development Program of Jiangsu Province

Youth of Excellence Project of Beijing Institute of Graphic Communication

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c01691

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