Proton Irradiation Effects in MOCVD Grown β-Ga2O3 and ε-Ga2O3 Thin Films-Reference-Cited by-同舟云学术

Proton Irradiation Effects in MOCVD Grown β-Ga₂O₃ and ε-Ga₂O₃ Thin Films

Published:2024-01 Issue:1 Volume:71 Page:67-71
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Yue Jian-Ying¹^ORCID,Li Shan²^ORCID,Qi Song¹,Ji Xue-Qiang³^ORCID,Wu Zhen-Ping¹,Li Pei-Gang³,Tang Wei-Hua²^ORCID

Affiliation:

1. School of Science and the State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

2. College of Integrated Circuit Science and Engineering and the National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing, China

3. School of Integrated Circuits and the State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Natural Science Foundation of Jiangsu Higher Education Institutions

Natural Science Research Start-up Foundation of Recruiting Talents of NJUPT

BUPT Innovation and Entrepreneurship Support Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

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