InAlGaN/GaN HEMTs at Cryogenic Temperatures-Reference-Cited by-同舟云学术

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Published:2016-06-22 Issue:4 Volume:5 Page:31
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Dogmus Ezgi,Kabouche Riad,Lepilliet Sylvie,Linge Astrid,Zegaoui Malek,Ben-Ammar Hichem,Chauvat Marie-Pierre,Ruterana Pierre,Gamarra Piero,Lacam Cédric,Tordjman Maurice,Medjdoub Farid

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

http://www.mdpi.com/2079-9292/5/2/31/pdf

Reference16 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

3. Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate

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