Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT

Abstract

Abstract In this paper, a temperature- and gate voltage-dependent current–voltage (I–V) model for gallium nitride (GaN) high electron mobility transistors (HEMTs) devices is studied. To help researchers and designers simulate devices in the absence of experimental data and improve the parameter extraction efficiency, the temperature and gate voltage dependence of mobility are discussed and incorporated into the proposed model, which is revised from the standard advanced SPICE model (ASM) for GaN HEMTs. The mobility variations with the gate voltage from −2 V to 6 V and the temperature from 10 K to 1000 K are analyzed. The simulation results of our model are compared with the standard ASM-HEMT model, and the output and transfer characteristics of the device from 270 K to 420 K are simulated. Therefore, our model may simulate various applications of GaN HEMTs at different gate voltages and temperatures in the early stages of design and research.