Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC-Reference-Cited by-同舟云学术

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Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

Published:2010-11 Issue:11 Volume:4 Page:305-307
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Leone Stefano,Beyer Franziska C.,Henry Anne,Kordina Olof,Janzén Erik

Funder

The Swedish Research Council

Swedish Energy Agency

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201004271/fullpdf

Reference17 articles.

1. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

2. Cubic SiC the Forgotten Polytype

3. Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects

4. Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism

5. A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

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3. Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates;Materials Today Communications;2024-03

4. CVD growth of 3C-SiC layers on 4H-SiC substrates with improved morphology;Solid State Communications;2023-10

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