Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism-Reference-Cited by-同舟云学术

Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism

Published:2008-01-23 Issue:3 Volume:8 Page:1044-1050
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Soueidan Maher¹,Ferro Gabriel¹,Kim-Hak Olivier¹,Cauwet François¹,Nsouli Bilal¹

Affiliation:

1. Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, Université Claude Bernard Lyon 1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France, and Lebanese Atomic Energy Commission-CNRS, P.O. Box 11-8281, Riad El Solh 1107 2260 Beirut, Lebanon

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg070499%2B

Reference17 articles.

1. Polytypism and Properties of Silicon Carbide

2. Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

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