CVD growth of 3C-SiC layers on 4H-SiC substrates with improved morphology
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface morphology of 3C–SiC layers grown on 4H–SiC substrates using TCS as silicon precursor;Solid State Communications;2024-11
2. A batch preparation of large-size graphite plate/SiC coating by CVD: CFD simulation and experimental;Ceramics International;2024-05
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