Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200844053/fullpdf
Reference22 articles.
1. Hot electron microwave conductivity of wide bandgap semiconductors
2. Growth and Properties of β‐SiC Single Crystals
3. Breakdown field in vapor‐grown silicon carbidep‐njunctions
4. Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs
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