Cubic SiC the Forgotten Polytype

Abstract

ABSTRACTThe two most common and most studied forms of SiC are 6H-SiC and 3C-SiC. The 3C-SiC, or cubic modification shares the zincblend lattice structure with other well developed semiconductor materials, such as GaAs and InP. We have grown thick 3C-SiC by the sublimation method. Our results show that it is possible to maintain the 3C polytype even at growth temperatures of 2000°C. Using the sublimation technique we have obtained growth rates as high as 130 microns/hr.