1. 9. Chaudhuri J. , Ignatiev K. , Edgar J. H. , Xie Z Y. , Gao Y. , to be submitted to J. Electr. Mails.
2. An examination of double positioning boundaries and interface misfit in beta‐SiC films on alpha‐SiC substrates
3. 1. For a comprehensive review of the current status of silicon carbide processing and device applications, see the special issues of Physica Status Solidi (a) 162 1 (1997) and (b) 202 1 (1997), edited by W.J. Choyke, H. Matsunami, and G. Penal.
4. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy
5. 5. Gao Y. , Edgar J. H. , Chaudhuri J. , Sidorov M. V. , and Braski D. N. , to be published in J. Cryst. Growth.