A computational study into the origin of SiC polytypes-Reference-Cited by-同舟云学术

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A computational study into the origin of SiC polytypes

Published:1992-01 Issue:1-4 Volume:11 Page:55-60
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Heine V.,Cheng C.,Needs R.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Explanation of the polytypes of SiC;McConnell,1982

2. A new theory of polytypism;Smith,1984

3. Ground state properties of the group IV ionic compound silicon carbide

4. Calculated ground-state properties of silicon carbide

5. Dynamical properties of silicon carbide;Churcher,1986

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The spds*p*+Δ tight binding model for 3C-SiC;Japanese Journal of Applied Physics;2024-04-01

2. Electron–Phonon Interaction Contribution to the Total Energy of Group IV Semiconductor Polymorphs: Evaluation and Implications;ACS Omega;2023-03-13

3. Antimicrobial properties of SiC nanostructures and coatings;Silicon Carbide Technology for Advanced Human Healthcare Applications;2022

4. A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide;Computational Materials Science;2015-04

5. Step flow and polytype transformation in growth of 4H-SiC crystals;Journal of Crystal Growth;2014-05

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