A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide-Reference-Cited by-同舟云学术

A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide

Published:2015-04 Issue: Volume:100 Page:159-165
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Guo Hui-Jun,Huang Wei,Liu Xi,Gao Pan,Zhuo Shi-Yi,Xin Jun,Yan Cheng-Feng,Liu Xue-Chao,Zheng Yan-Qing,Yang Jian-Hua,Shi Er-Wei

Funder

Natural Science Foundation of Shanghai

Chinese Academy of Sciences

Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province

Young Scientists Fund of the National Natural Science Foundation of China

National High-tech R&D Program of China

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference28 articles.

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2. Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances

3. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

4. Silicon Carbide: Recent Major Advances;Choyke,2005

5. A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures

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