Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC — high resolution X-ray diffractometry and synchrotron X-ray topography study-Reference-Cited by-同舟云学术

Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC — high resolution X-ray diffractometry and synchrotron X-ray topography study

Published:2000-07 Issue:3 Volume:76 Page:217-224
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Chaudhuri J,Ignatiev K,Edgar J.H,Xie Z.Y,Gao Y,Rek Z

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. For a comprehensive review of the current status of silicon carbide processing and device applications, see the special issues of Physica Status Solidi, (a) 162, 1 (1997) and (b) 202, 1 (1997), edited by W.J. Choyke, H. Matsunami, and G. Pensl.

2. Cubic SiC the Forgotten Polytype

3. An examination of double positioning boundaries and interface misfit in beta‐SiC films on alpha‐SiC substrates

4. Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

5. Low-temperature chemical-vapor deposition of 3C–SiC films on Si(100) using SiH4–C2H4–HCl–H2

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography;Journal of Electronic Materials;2022-01-16

2. Mechanical and tribological properties of silicon carbide coating on Inconel alloy from liquid pre-ceramic precursor;Ceramics International;2014-06

3. Oxygen partial pressure dependent electrical conductivity type conversion of phosphorus-doped ZnO thin films;Journal of Physics D: Applied Physics;2014-01-15

4. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications;Chemical Reviews;2011-12-02

5. Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide;Applied Surface Science;2007-06