P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure-Reference-Cited by-同舟云学术

P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure

Published:2019-05-29 Issue:1 Volume:50 Page:1226-1229
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Nakata Mitsuru¹,Ochi Mototaka²,Takei Tatsuya¹,Tsuji Hiroshi¹,Miyakawa Masashi¹,Motomura Genichi¹,Goto Hiroshi²,Fujisaki Yoshihide¹

Affiliation:

1. NHK Science & Technology Research Laboratories Tokyo Japan

2. Kobe Steel Ltd.Applied Physics Research Laboratory Hyogo Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13153

Reference13 articles.

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2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer

4. DC sputtered amorphous In–Sn–Zn–O thin-film transistors: Electrical properties and stability

5. Development of flexible displays using back-channel-etched In−Sn−Zn−O thin-film transistors and air-stable inverted organic light-emitting diodes;Nakata M.;J. the SID,2016

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