Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangdong China
2. TCL China Star Optoelectronics Display Technology Co., Ltd Guangdong China
3. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd Guangdong China
Abstract
In this work, high‐mobility oxide backing‐plate with pulse‐hybrid‐modulation (PHM) driving circuit has been well applied in CSOT G4.5 production line. The self‐aligned top‐gate (SATG) thin film transistor (TFT) exhibits linear mobility over 30 cm2 V‐1 s‐1 , excellent Vth uniformity 0.3±0.2V and PBTS/NBTIS <1.5 V/h. The PHM driving circuit significantly improves the low‐gray uniformity and the color gamut shift of Micro‐LED (MLED) under low‐current density. In addition, a 19 inch spliced MLED panel has been demonstrated, in which color gamut >120% NTSC, pixel pitch 0.4 mm, contrast ratio >1000000:1, invisible border and splicer.
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