High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer-Reference-Cited by-同舟云学术

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High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer

Published:2012-03-01 Issue:3S Volume:51 Page:03CB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tomai Shigekazu,Nishimura Mami,Itose Masayuki,Matuura Masahide,Kasami Masashi,Matsuzaki Shigeo,Kawashima Hirokazu,Utsuno Futoshi,Yano Koki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

3. 22.1: Invited Paper: Technological Challenges for Large-Size AMOLED Display

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1. Improved Negative Bias Stability of Sol–Gel-Processed SnO₂ Thin-Film Transistors with Vertically Controlled Carrier Concentrations;ACS Applied Electronic Materials;2023-04-19

2. Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O;Physical Review B;2022-06-03

3. Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors;Advanced Materials Interfaces;2022-03-27

4. Room‐Temperature Processed Lateral Trench‐Metal–Insulator–Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a‐Ga ₂ O ₃ ) Thin Films on Single‐Crystal Silicon <100>;physica status solidi (a);2022-03-04

5. Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation;ACS Applied Materials & Interfaces;2022-02-17

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