Room‐Temperature Processed Lateral Trench‐Metal–Insulator–Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a‐Ga <sub>2</sub> O <sub>3</sub> ) Thin Films on Single‐Crystal Silicon <100>-Reference-Cited by-同舟云学术

Room‐Temperature Processed Lateral Trench‐Metal–Insulator–Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a‐Ga ₂ O ₃ ) Thin Films on Single‐Crystal Silicon <100>

Published:2022-03-04 Issue:10 Volume:219 Page:2200054
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Ebrahimi-Darkhaneh Hadi¹²^ORCID,Shamsi Zeshaan³,Banda Martin G. R.³^ORCID,Quevedo-Lopez Manuel³^ORCID,Colombo Luigi¹³,Banerjee Sanjay K.¹²^ORCID

Affiliation:

1. Analog Power Products Texas Instruments Inc. 12500 TI Blvd Dallas TX 75243 USA

2. Cockrell School of Engineering University of Texas at Austin 301 E Dean Keeton Street Austin TX 78712 USA

3. Department of Material Science and Engineering University of Texas at Dallas 800 W Campbell Road Richardson TX 75080 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200054

Reference56 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

3. Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios

4. MBE grown Ga2O3 and its power device applications

5. W.Li K.Nomoto Z.Hu N.Tanen K.Sasaki A.Kuramata D.Jena H. G.Xing. in76th Device Research Conf. IEEE Piscataway NJ2018. pp.1–2.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen-included plasma-assisted reactive sputtering for conductivity control of ultra-wide bandgap amorphous gallium oxide;Japanese Journal of Applied Physics;2024-04-01

2. Low Interface Resistance in Epitaxial β-Ga₂O₃ Vertical Power Diodes on Silicon (100) Using TiN Buffer;ACS Applied Electronic Materials;2024-03-13

3. High-quality Mg-doped p-type Ga2O3 crystalline thin film by pulsed laser;Journal of Materials Science: Materials in Electronics;2022-09-28