Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors-Reference-Cited by-同舟云学术

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Published:2022-09-18 Issue:12 Volume:8 Page:2200643
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Sun Chen¹,Li Chao²,Samanta Subhranu¹,Han Kaizhen¹,Zheng Zijie¹,Zhang Jishen¹,Kong Qiwen¹,Xu Haiwen¹,Zhou Zuopu¹,Chen Yue¹,Zhuo Cheng²,Ni Kai³,Yin Xunzhao²,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering National University of Singapore Singapore 117582 Singapore

2. College of Information Science and Electronic Engineering Zhejiang University Hangzhou 310027 China

3. Department of Electrical and Microelectronic Engineering Rochester Institute of Technology Rochester NY 14623 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200643

Reference67 articles.

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3. H.‐T.Lue P.‐K.Hsu M.‐L.Wei T.‐H.Yeh P.‐Y.Du W.‐C.Chen K.‐C.Wang C.‐Y.Lu in2019 IEEE International Electron Devices Meeting (IEDM) IEEE San Francisco CA2019 pp.38.1.1–38.1.4.

4. 3-D NAND Technology Achievements and Future Scaling Perspectives

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