Affiliation:
1. Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
2. Hubei Key Laboratory of Nuclear Solid Physics, Wuhan University, Wuhan 430072, China
Abstract
Non-volatile memory based on thin-film transistor is crucial for system-on-panel and flexible electronic systems. Achieving high-performance and reliable thin-film transistor (TFT) memory still remains challenging. Here, for the first time, we present a ZnO TFT memory utilizing self-assembled Au nanocrystals with a low thermal budget, exhibiting excellent memory performance, including a program/erase window of 9.8 V, 29% charge loss extrapolated to 10 years, and remarkable endurance characteristics. Moreover, the memory exhibits favorable on-state characteristics with mobility, subthreshold swing, and current on–off ratio of 17.6 cm2V−1s−1, 0.71 V/dec, and 107, respectively. Our study shows that the fabricated TFT memory has great potential for practical applications.
Funder
Major Program (JD) of Hubei Province