Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm-Reference-Cited by-同舟云学术

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Published:2014-07-15 Issue:7 Volume:7 Page:5117-5145
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Zhao Chun,Zhao Ce,Taylor Stephen,Chalker Paul

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/7/7/5117/pdf

Reference56 articles.

1. JVD silicon nitride as tunnel dielectric in p-channel flash memory

2. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

3. Charge-trapping memory cell of SiO2/SiN/high-k dielectric Al2O3 with TaN metal gate for suppressing backward-tunneling effect;Lee;Appl. Phys. Lett.,2005

4. Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- $k$ Trapping Layer

5. Scalable Virtual-Ground Multilevel-Cell Floating-Gate Flash Memory

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