Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films-Reference-Cited by-同舟云学术

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Published:2022-08-03 Issue:12 Volume:8 Page:2200601
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Fields Shelby S.¹^ORCID,Cai Truong²,Jaszewski Samantha T.¹,Salanova Alejandro¹,Mimura Takanori¹,Heinrich Helge H.¹,Henry Michael David³,Kelley Kyle P.⁴,Sheldon Brian W.²,Ihlefeld Jon F.¹

Affiliation:

1. Department of Materials Science and Engineering University of Virginia Charlottesville VA 22904 USA

2. Department of Engineering Brown University Providence RI 02912 USA

3. Sandia National Laboratories Albuquerque NM 87185 USA

4. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37381 USA

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

National Science Foundation

Oak Ridge National Laboratory

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200601

Reference77 articles.

1. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

2. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

3. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

4. Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2

5. Unveiling the double-well energy landscape in a ferroelectric layer

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