Dual Ferroelectric Stack of HfZrO₂/Al:HfO₂ With Tunable Coercive Voltage for High-Density Memory Applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Dual Ferroelectric Stack of HfZrO₂/Al:HfO₂ With Tunable Coercive Voltage for High-Density Memory Applications

Published:2024-06 Issue:6 Volume:71 Page:3981-3984
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jeong Jiae¹,Park Hyoungjin¹,Kim Nayeon¹^ORCID,Kim Hyun Wook¹^ORCID,Hong Eunryeong¹^ORCID,Choi Hyeonsik¹^ORCID,Jeon Seonuk¹^ORCID,Kim Yunsur¹,Woo Jiyong¹^ORCID

Affiliation:

1. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea

Funder

National Research and Development Program through the National Research Foundation of Korea

Ministry of Science and ICT

Technology Innovation Program

Ministry of Trade, Industry and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10502354.pdf?arnumber=10502354

Reference22 articles.

1. Ferroelectrics Based on HfO2 Film

2. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

3. Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

4. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

5. CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP