Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films-Reference-Cited by-同舟云学术

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Published:2018-04-23 Issue:17 Volume:112 Page:172902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Si Joon¹,Mohan Jaidah¹,Lee Jaebeom¹,Lee Joy S.¹^ORCID,Lucero Antonio T.¹,Young Chadwin D.¹^ORCID,Colombo Luigi¹,Summerfelt Scott R.²,San Tamer²,Kim Jiyoung¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA

2. Texas Instruments, 13121 TI Blvd, Dallas, Texas 75243, USA

Funder

Texas Instruments

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026715

Reference21 articles.

1. Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

2. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

3. Ferroelectricity in hafnium oxide thin films

4. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

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