Hybrid Gate Dielectric of MoS 2 Transistors for Enhanced Photo‐Electronic Stability-Reference-Cited by-同舟云学术

Hybrid Gate Dielectric of MoS 2 Transistors for Enhanced Photo‐Electronic Stability

Published:2021-06-27 Issue:14 Volume:8 Page:2100599
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Park Hamin¹,Oh Dong Sik²³,Hong Woonggi²³^ORCID,Kang Juyeon⁴,Lee Geon‐Beom²,Shin Gwang Hyuk²³,Choi Yang‐Kyu²,Im Sung Gap⁴,Choi Sung‐Yool²³^ORCID

Affiliation:

1. Department of Electronic Engineering Kwangwoon University Seoul 01897 Republic of Korea

2. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

3. Graphene/2D Materials Research Center Center for Advanced Materials Discovery towards 3D Displays Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

4. Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100599

Reference41 articles.

1. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

2. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

3. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

4. Single-layer MoS2 transistors

5. MoS 2 transistors with 1-nanometer gate lengths

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable Doping Strategy for Few-Layer MoS₂ Field-Effect Transistors via NH₃ Plasma Treatment;ACS Applied Materials & Interfaces;2024-08-13

2. Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS₂ FETs;Nanoscale;2024

3. Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors;Polymers;2023-03-10

4. Sequential Infiltration Synthesis with Organic Co-reactants for Extensively Swollen Organic-Inorganic Hybrid Thin Films;ACS APPL POLYM MATER;2023

5. Sequential Infiltration Synthesis with Organic Co-reactants for Extensively Swollen Organic–Inorganic Hybrid Thin Films;ACS Applied Polymer Materials;2022-12-12