Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures-Reference-Cited by-同舟云学术

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Published:2013-08-14 Issue:9 Volume:7 Page:7931-7936
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Gwan-Hyoung¹²³,Yu Young-Jun⁴⁵,Cui Xu¹,Petrone Nicholas¹,Lee Chul-Ho⁵⁶,Choi Min Sup²⁷,Lee Dae-Yeong²⁷,Lee Changgu³⁷,Yoo Won Jong²⁷,Watanabe Kenji⁸,Taniguchi Takashi⁸,Nuckolls Colin⁶,Kim Philip⁵,Hone James¹

Affiliation:

1. Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

2. Samsung-SKKU Graphene Center (SSGC), Suwon, 440-746, Korea

3. School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea

4. Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon, 305-700, Korea

5. Department of Physics, Columbia University, New York, New York 10027, United States

6. Department of Chemistry, Columbia University, New York, New York 10027, United States

7. SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi 440-746, Korea

8. National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn402954e

Reference38 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

3. Strong Coulomb drag and broken symmetry in double-layer graphene

4. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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