Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS<sub>2</sub> FETs-Reference-Cited by-同舟云学术

Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS₂ FETs

Published:2024 Issue:35 Volume:16 Page:16602-16610
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hong Woonggi¹^ORCID,Shim Gi Woong²^ORCID,Jin Hyeok Jun²,Park Hamin³,Kang Mingu²,Yang Sang Yoon²^ORCID,Choi Sung-Yool²^ORCID

Affiliation:

1. School of Electronics and Electrical Engineering, Convergence Semiconductor Research Center, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do 16890, Republic of Korea

2. School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

3. Department of Electronic Engineering, Kwangwoon University, 20 Gwangun-ro, Nowon-gu, Seoul 01897, Republic of Korea

Abstract

By considerably suppressing surface optical phonon scattering through the insertion of AlN interfacial layers, MoS2 FETs show enhanced field-effect mobility at room temperature, compared with those using only Al2O3.

Funder

LG Display

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR01231C

Reference52 articles.

1. Single-layer MoS2 transistors

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides

4. High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics

5. Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride