Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides-Reference-Cited by-同舟云学术

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Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides

Published:2014-07-24 Issue:4 Volume:90 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jin Zhenghe,Li Xiaodong,Mullen Jeffrey T.,Kim Ki Wook

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.90.045422/fulltext

Reference23 articles.

1. Graphene is not alone

2. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

3. Electronic properties of intercalation complexes of the transition metal dichalcogenides

4. Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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