Tunable Doping Strategy for Few-Layer MoS<sub>2</sub> Field-Effect Transistors via NH<sub>3</sub> Plasma Treatment-Reference-Cited by-同舟云学术

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Tunable Doping Strategy for Few-Layer MoS₂ Field-Effect Transistors via NH₃ Plasma Treatment

Published:2024-08-13 Issue:33 Volume:16 Page:43849-43859
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kang Mingu¹^ORCID,Hong Woonggi²,Lee Inseong¹,Park Seohak¹,Park Cheolmin¹,Bae Sanggeun¹,Lim Hyeongjin¹,Choi Sung-Yool¹^ORCID

Affiliation:

1. School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea

2. School of Electronics and Electrical Engineering, Convergence Semiconductor Research Center, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do 16890, Republic of Korea

Funder

LG Display

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c08549

Reference59 articles.

1. Single-layer MoS2 transistors

2. Ultrasensitive photodetectors based on monolayer MoS2

3. High-Performance Sensors Based on Molybdenum Disulfide Thin Films

4. 200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors

5. Two-dimensional perovskite oxide as a photoactive high-κ gate dielectric

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