Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage-Reference-Cited by-同舟云学术

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

Author:

Lee Gwan-Hyoung¹,Cui Xu,Kim Young Duck,Arefe Ghidewon,Zhang Xian,Lee Chul-Ho²,Ye Fan,Watanabe Kenji³,Taniguchi Takashi³,Kim Philip⁴,Hone James

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, Korea

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. Department of Physics and Applied Physics, Harvard University, Cambridge, Massachusetts 02139, United States

Funder

National Research Foundation of Korea

Division of Materials Research

KU-KIST Graduate School of Converging Science and Technology, Korea University

Yonsei University

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference47 articles.

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