Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO 2 /SiO 2 /Si films
Author:
Affiliation:
1. MEIS development teamK‐MAC Daejeon South Korea
2. Ion Implantation Laboratory, Institute of PhysicsFederal University of Rio Grande do Sul Porto Alegre Brazil
3. Department of New BiologyDGIST Daegu South Korea
Funder
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.6642
Reference42 articles.
1. Ion beam crystallography of surfaces and interfaces
2. High-resolution depth profiling in ultrathin Al2O3 films on Si
3. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
4. Quantitative Compositional Profiling of Conjugated Quantum Dots with Single Atomic Layer Depth Resolution via Time-of-Flight Medium-Energy Ion Scattering Spectroscopy
5. Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-Feld
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