Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering-Reference-Cited by-同舟云学术

Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering

Published:2019-07-05 Issue:14 Volume:91 Page:9315-9322
ISSN:0003-2700
Container-title:Analytical Chemistry
language:en
Short-container-title:Anal. Chem.

Author:

Min Won Ja¹,Kim Jwasoon¹,Park Kyungsu¹,Marmitt Gabriel²,England Jonathan³,Moon Dae Won⁴^ORCID

Affiliation:

1. MEIS Development Team, Korea Materials and Analysis Corporation, Techno 8-ro 33, Yuseng-gu, Daejon 305-500, Republic of Korea

2. Institute of Physics, Federal University of Rio Grande do Sul, Av. Bento Gonçalves 9500, CP 15051, CEP 91501-970 Porto Alegre, Rio Grande do Sul, Brazil

3. Varian Semiconductor Equipment, Applied Materials Implant Division, Gloucester MA, USA; Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, U.K.

4. Department of New Biology, DGIST, Dalseong, Daegu 711-873, Republic of Korea

Funder

DGIST R&D Program of the Ministry of Science, ICT, & Future Planning

INNOPOLIS Foundation, funded by the Ministry of Knowledge Economy

Publisher

American Chemical Society (ACS)

Subject

Analytical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.analchem.9b02687

Reference30 articles.

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3. Intel Announces 22nm 3-D Tri-Gate Transistor Technology, Intel Newsroom, 2011. See the following: http://newsroom.intel.com/docs/DOC-2032#pressmaterials.

4. Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

5. Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

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