9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length
Author:
Affiliation:
1. Semiconductor Energy Laboratory Co. Ltd. Tochigi Japan
2. Semiconductor Energy Laboratory Co. Ltd. Kanagawa Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14621
Reference12 articles.
1. Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring;Akimoto K.;SID Int. Symp. Dig. Tech. Pap.,2014
2. Channel-Etched CAAC-OS FETs Using Multi-layer IGZO;Shima Y.;SID Int. Symp. Dig. Tech. Pap.,2015
3. Fabrication of 8k4k Organic EL Panel using High-Mobility IGZO Material;Okazaki K.;SID Int. Symp. Dig. Tech. Pap.,2015
4. Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels;Shima Y.;SID Int. Symp. Dig. Tech. Pap.,2016
5. Formation of Source and Drain Regions in Top-Gate Self-Aligned Oxide Semiconductor Field-Effect Transistor;Okazaki K.;SID Int. Symp. Dig. Tech. Pap.,2018
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1. Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display;Journal of the Society for Information Display;2024-06-21
2. 43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO;SID Symposium Digest of Technical Papers;2023-06
3. 32‐4: Metal Oxide Thin‐Film Transistors with 0.1 μm channel length formed by Self‐Aligned Nanogap Patterning;SID Symposium Digest of Technical Papers;2022-06
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