33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring-Reference-Cited by-同舟云学术

33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

Published:2014-06 Issue:1 Volume:45 Page:465-468
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Akimoto Kengo¹,Shima Yukinori¹,Jincho Masami¹,Nakazawa Yasutaka¹,Okazaki Kenichi¹,Koezuka Junichi¹,Ohta Masashi²,Ishihara Noritaka²,Nakashima Motoki²,Hirohashi Takuya²,Takahashi Masahiro²,Yamazaki Shunpei²

Affiliation:

1. Advanced Film Device Inc.

2. Semiconductor Energy Laboratory Co., Ltd.

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2014.tb00121.x/fullpdf

Reference13 articles.

1. 15.1: Research, Development, and Application of Crystalline Oxide Semiconductor

2. S. Ito 151 2013

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. Y. Yamada Jpn. J. Appl. Phys.

5. M. Tsubuku 166 2013

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS;SID Symposium Digest of Technical Papers;2022-06

2. 9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length;SID Symposium Digest of Technical Papers;2021-05

3. 76-2: Field-Effect Transistor with CAAC/CAC-OS Double-Layer Structure for Diversion of Gen 8-10.5 Amorphous Silicon Production Lines;SID Symposium Digest of Technical Papers;2017-05

4. 24-1:Invited Paper: Flexible OLED Display Using C-Axis-Aligned-Crystal/Cloud-Aligned Composite Oxide Semiconductor Technology and Laser Separation Technology;SID Symposium Digest of Technical Papers;2017-05

5. Applications of CAAC-IGZO FETs to Displays;Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO;2016-11-18