76-2: Field-Effect Transistor with CAAC/CAC-OS Double-Layer Structure for Diversion of Gen 8-10.5 Amorphous Silicon Production Lines

Author:

Okazaki Kenichi1,Shima Yukinori1,Kurosaki Daisuke1,Nakazawa Yasutaka1,Koezuka Junichi1,Baba Haruyuki2,Yamazaki Shunpei2

Affiliation:

1. Semiconductor Energy Laboratory Co. Ltd.; Tochigi Japan

2. Semiconductor Energy Laboratory Co. Ltd.; Kanagawa Japan

Publisher

Wiley

Reference14 articles.

1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3-A2O3-BO systems [A:Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C;Kimizuka;J. Solid State Chem.,1985

2. Homologous compounds, InFeO3(ZnO)m (m = 1 - 9);Kimizuka;J. Solid State Chem.,1988

3. Analysis of Nanoscale Crystalline Structure of In-Ga-Zn-oxide Thin Film with Nano Beam Electron Diffraction;Ito;Proc. AMFPD'13,2013

4. Nanometer-scale crystallinity in In-Ga-Zn-oxide thin film deposited at room temperature observed by nanobeam electron diffraction;Sorida;Jpn. J. Appl. Phys.,2014

5. Research, Development, and Application of Crystalline Oxide Semiconductor;Yamazaki;SID Int. Symp. Dig. Tech. Pap.,2012

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