76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels
Author:
Affiliation:
1. Advanced Film Device Inc.; Tochigi Japan
2. Semiconductor Energy Laboratory Co., Ltd.; Kanagawa Japan
Publisher
Wiley
Reference13 articles.
1. 8.3:Invited Paper: Advantages of IGZO Oxide Semiconductor
2. 52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide
3. 33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring
4. Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4
5. Chemical Etch Rate and X-Ray Structure of Reactive Sputtered c-Axis Aligned Crystalline InxGayZnzO4Films
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2. 30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor;SID Symposium Digest of Technical Papers;2024-06
3. Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm 2 V ‐1 s ‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays;Small Methods;2022-07-25
4. P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS;SID Symposium Digest of Technical Papers;2022-06
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