Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm 2 V ‐1 s ‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays
Author:
Affiliation:
1. Advanced Display Research Center (ADRC) Department of Information Display Kyung Hee University Seoul 02447 Korea
2. Advanced Technology Research Laboratories Idemitsu Kosan Co., Ltd. Chiba 299‐0293 Japan
Publisher
Wiley
Subject
General Materials Science,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/smtd.202200668
Reference55 articles.
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3. Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs
4. Present status of amorphous In–Ga–Zn–O thin-film transistors
5. High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
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