81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display-Reference-Cited by-同舟云学术

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

Published:2023-06 Issue:1 Volume:54 Page:1144-1146
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Rabbi Md. Hasnat¹,Bae Jinbaek¹,Lim Taebin¹,Yamaguchi Koji²,Sasaki Daichi²,Kawashima Emi²,Tsuruma Yuki²,Jang Jin¹

Affiliation:

1. Advanced Display Research Center and Department of Information Display Kyung Hee University Seoul Korea 130-701

2. Advanced Technology Research Laboratories Idemitsu Kosan Co., Ltd. 1280 Kami-izumi Sodegaura, Chiba Japan 299-0293

Abstract

We demonstrate high‐performance, coplanar polycrystalline InGaO (poly‐IGO) thin film transistors (TFTs) on polyimide (PI) substrate. The TFTs exhibit the saturation mobility (µSAT) of >45 cm2 V-1 s-1 and very stable bias stress stabilities of negligible ΔVTH of +0.2 V and +0.1 V under PBTS and NBTS, respectively. A gate driver on the PI substrate is working well with a very low rising and falling time of less than 0.62 µs. Therefore, the flexible poly‐IGO TFTs could be used for high‐resolution foldable AMOLED display backplanes.

Publisher

Wiley

Subject

General Medicine

Reference8 articles.

1. Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V-1 s-1 and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays;Rabbi MH;Small Methods,2022

2. Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor with Split Active Layer by N2O Annealing;Rabbi MH;IEEE Electron Device Lett,2020

3. Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low- Temperature Poly-Si Oxide Thin-Film Transistors;Kim J;IEEE Electron Device Lett,2022

4. High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

5. Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer;Lee S;Adv Funct Mater,2017