P-11: Channel-Etched CAAC-OS FETs using Multi-layer IGZO-Reference-Cited by-同舟云学术

P-11: Channel-Etched CAAC-OS FETs using Multi-layer IGZO

Published:2015-06 Issue:1 Volume:46 Page:1158-1161
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Shima Yukinori¹,Kanemura Hiroshi¹,Higano Satoshi¹,Hosaka Yasuharu¹,Okazaki Kenichi¹,Koezuka Junichi¹,Matsuda Shinpei²,Matsubayashi Daisuke²,Yamazaki Shunpei²

Affiliation:

1. Advanced Film Device Inc, Tochigi, Japan

2. Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sdtp.10037/fullpdf

Reference9 articles.

1. 8.3:Invited Paper: Advantages of IGZO Oxide Semiconductor

2. 33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

3. Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide;Koezuka;SID Symposium Digest,2013

4. 3.3:Invited Paper: Future Possibility of C-Axis Aligned Crystalline Oxide Semiconductors Comparison with Low-Temperature Polysilicon

5. Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs

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3. 76-2: Field-Effect Transistor with CAAC/CAC-OS Double-Layer Structure for Diversion of Gen 8-10.5 Amorphous Silicon Production Lines;SID Symposium Digest of Technical Papers;2017-05

4. Applications of CAAC-IGZO FETs to Displays;Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO;2016-11-18

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