43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO-Reference-Cited by-同舟云学术

43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO

Published:2023-06 Issue:1 Volume:54 Page:623-626
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Nakada Masataka¹,Jincho Masami¹,Dobashi Masayoshi¹,Iguchi Takahiro¹,Shima Yukinori¹,Koezuka Junichi¹,Okazaki Kenichi¹,Kusunoki Koji²,Yamazaki Shunpei²

Affiliation:

1. Semiconductor Energy Laboratory Co., Ltd. Tochigi Japan

2. Semiconductor Energy Laboratory Co., Ltd. Kanagawa Japan

Abstract

In this study, an oxide semiconductor vertical field‐effect transistor (VFET) was developed and VFETs with a channel length of 0.5 mm on a glass substrate with small variation were successfully fabricated. This technology enables displays to have high resolution and low power consumption compared with the use of low‐temperature polysilicon.

Publisher

Wiley

Subject

General Medicine

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