63.3: Fabrication of 8k4k Organic EL Panel using High-Mobility IGZO Material-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

63.3: Fabrication of 8k4k Organic EL Panel using High-Mobility IGZO Material

Published:2015-06 Issue:1 Volume:46 Page:939-942
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Okazaki Kenichi¹,Kanemura Hiroshi¹,Kurosaki Daisuke¹,Shima Yukinori¹,Koezuka Junichi¹,Kawashima Susumu²,Shiokawa Masataka²,Miyake Hiroyuki²,Yamazaki Shunpei²

Affiliation:

1. Advanced Film Device Inc, Tochigi, Japan

2. Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan

Publisher

Wiley

Reference12 articles.

1. C-Axis Aligned Crystalline In-Ga-Zn-Oxide FET with High Reliability;Takahashi;Proc. AM-FPD’,2011

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS;SID Symposium Digest of Technical Papers;2022-06

2. P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS;SID Symposium Digest of Technical Papers;2021-05

3. 9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length;SID Symposium Digest of Technical Papers;2021-05

4. 44-2: Separation Process using Commercially Available Polyimide or Acrylic with Linear Laser;SID Symposium Digest of Technical Papers;2017-05

5. Applications of CAAC-IGZO FETs to Displays;Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO;2016-11-18

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP