Electrical characterization of AlGaN/GaN on AlN substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
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1. Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate;Applied Physics Letters;2024-04-29
2. DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate;physica status solidi (a);2023-01-22
3. Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD;Materials Today: Proceedings;2021
4. Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy;Journal of Crystal Growth;2020-06
5. Temperature dependence of the character of AlN nucleation layer grown on SiC substrates by MOCVD;Superlattices and Microstructures;2016-11
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