AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1555282
Reference8 articles.
1. Report on the growth of bulk aluminum nitride and subsequent substrate preparation
2. GaN And Related Materials For High Power Applications
3. Monte Carlo simulation of electron transport in wurtzite aluminum nitride
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1. Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate;Applied Physics Letters;2024-04-29
2. Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates;Applied Physics Letters;2024-04-08
3. Transient Analysis of AlGaN/GaN Heterostructure Based on Spectral-Element Time-Domain Method;2023 International Applied Computational Electromagnetics Society Symposium (ACES-China);2023-08-15
4. N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates;Applied Physics Letters;2023-02-27
5. DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate;physica status solidi (a);2023-01-22
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